Mobicon-Remote Electronic Pte Ltd
50 Ubi Ave 3,
#02-06 Frontier,
Singapore 408866.
+65-67477472
+65-67476768

UTC - UTM2054 N-CHANNEL ENHANCEMENT MODE MOSFET

Previous 39 / 136 Next

UTC - UTM2054 N-CHANNEL ENHANCEMENT MODE MOSFET MOSFETs UTC
Quantity
Add Quotation


N-CHANNEL ENHANCEMENT MODE 

DESCRIPTION

The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FEATURES
* RDS(ON) ≤ 40mΩ @ VGS=10V, ID=5.0A
* RDS(ON) ≤ 54mΩ @ VGS=4.5V, ID=3.5A
* RDS(ON) ≤ 130mΩ @ VGS=2.5V, ID=2.5A
* Ultra low gate charge ( typical 11.5 nC )
* Low reverse transfer capacitance ( CRSS = typical 60 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL


You have 0 items in you cart. Would you like to checkout now?
0 items
Switch to Mobile Version
Recent Updates
Subscribe Newsletter
1
Hello! Thanks for visiting my site. Please press Start button to Contact with Admin :)

Start